PART |
Description |
Maker |
AT6020 |
SILICON ABRUPT JUNCTION TUNING VARACTOR VHF BAND, 39 pF, 70 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
PC128C PG210C PC117A |
33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
|
|
JAN1N5472A JAN1N5468A JANTX1N5471A |
47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
V628 V620 |
15 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 6.8 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
ATV1005 |
6.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
DH71100-70T10 |
HF-S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
EH74470 |
L BAND, 47 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
KV30S8 |
VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Voltronics, Corp.
|
GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|
CVE7800-06-023-011 CVE7800-24-023-011 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
CVE7800-12-290-001 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
|